采用线性组合算符法和幺正变换方法,研究极性晶体膜中束缚磁极化子的自陷能随膜厚d的变化关系.得出束缚磁极化子的自陷能由两部分组成:第一部分是由于电子-体LO声子相互作用所引起的(E_e~(tr)-LO),第二部分则是电子-SO声子相互作用引起的.后者又包含两部分,分别是电子与极性膜中两支表面声子相互作用的贡献(E_e~(tr)-SO(+),E_e~(tr)-SO(-)).通过对KCl半导体膜的数值计算表明,E_e~(tr)-ph和磁极化子的振动频率λ随膜厚d的增加而减少;当膜厚大于5 nm时,总自陷能 E_e~(tr)-ph 趋于一稳定值.另外,由于稳恒磁场的存在,使磁极化子的自陷能增大,这主要是由于稳恒磁场的存在,使电子-声子间的相互作用改变而引起的.
The relationship between the ground state energy and self-trapping energy (E_e~(tr)-ph) with the polar slab thickness of the bound magnetopolaron in a polar slab was studied by using the Huybrecht's linear combination operator and unitary transformations method. E_e~(tr)-ph consists of two parts, one is E_e~(tr)-LO, the other is E_e~(tr)-SO, and E_e~(tr)-SO also consists of two parts, one is E_e~(tr)-SO(+), the other is E_e~(tr)-SO(-). Taking KCl as an example, E_e~(tr)-ph and A all reduced with the increase of the slab thickness, and the self-trapping energy was stablized to a low level when the slab tluckness was above 5 nm, while when there was a stable magnetic fild, it increased. The reason is probably the change of electron-phonon interaction in presence of stable magnetic field.
参考文献
| [1] | Licari J J,Evrand R.Electron-phonons interaction in adielectric slab:effects of the electronic polarizability[J].Phys.Rev.B,1977,15:2254-2264. |
| [2] | Licari J J.Polaron self-energy in a dielectric slab[J].Solid State Commun..,1979,29:625. |
| [3] | Sherman A V.Dependence of the polaron binding energy and effective mass in a crystallayer on its thickness[J].Solid State Commun.,1981,39:273. |
| [4] | Hawton M H,Paranjape V V.Polaron in thin slab[J].J.Phy8.Soc.Jpn.,1983,49:3563-3570. |
| [5] | Sarma S Das.The effective mass in GaAs heterostructure[J].Phys.Rev.B,1983,27:2590. |
| [6] | Gu Shiwei,Kong Xiaojun,Wei Chengwen.A magnetopolaron in aslabofa polar crystal[J].J.Phys.C:Solid State Phys.,1998,21:1497-1510. |
| [7] | Ninno D,Ladonisi G.Calculation of surface-polaron ground-state energy and effective potential[J].Phys.Rev.B,1988,38:3803. |
| [8] | Eerdunchaolu,Xiao Jinglin.The effective mass of the electron-surface phonon strong-coupling magnetopolaron in a slab of polar crystalwithin constant magnetic fields[J].Journal of Infrared and Millimeter Waves (红外与毫米波学报),2001,20(1):37-40 (in Chinese). |
| [9] | Eerdunchaolu,Xiao Wei,Xiao Jinglin.The influence of the electron-surface phonon strong-coupling on the self trapping energy of the magnetopolaron in a polar-crystal slab within magnetic fields[J].Journal of Optoelectronics ·Laser (光电子·激光),1999,10(5):457-460 (in Chinese). |
| [10] | Eerdunchaolu,Li shu sheng,Xiao Jinglin.Influence of electron-surface phonon strong-coupling on properties of polaron in a CdF2 semiconductor slab[J].Chinese Journal of Semiconductors (半导体学报),2000,21(3):225-231 (in Chinese). |
| [11] | Wang xiuqing,Xiao jinglin.The bound polaron in a polar semiconductor slab[J].Chinese Journal of Luminescence (发光学报),2006,27(6):843-847 (in Chinese). |
| [12] | Kartheuse E.Polaron in Ionic Crystals and Polar Semiconductors[M].New York:North-Holland,1972. |
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