利用溶胶凝胶法在Al2O3衬底上制备出了c轴择优取向的钼掺杂氧化锌(MZO)透明导电薄膜,研究了钼的掺杂量(0～1 at%)对钼掺杂氧化锌薄膜光电性能的影响.研究结果表明:所制备的薄膜为六方纤锌矿型结构且表面平整、致密.通过高温真空退火,MZO薄膜的电阻率明显降低.且随着钼含量的增加,MZO薄膜的电阻率呈现出先减小后增大的趋势,当钼含量为0.4at%时,获得最小电阻率为0.13 Ωcm.薄膜在近红外区域(800～2000 nm)的平均透过率大于85%,这可以有效地拓宽光电器件的光谱范围.
Mo-doped ZnO (MZO) films with different Mo concentration (0～1 at%) were prepared on Al2O3(0001) substrates by sol-gel spin coating route. It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation. The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum. The resistivity of the films initially decreases with the increase of Mocontent and then gradually increases with a further increase of Mo content. The lowest resistivity of 0.13 Ωcm was obtained at a Mo content of 0.4 at%. The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics. The high average transmittance (＞85%)in near-infrared region (800～2000 nm) indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.
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