研究了含Rashba自旋轨道耦合的磁电调制半导体二维电子气中弹道电子反常位移(Goos-H(a)nchen位移,即GH位移),实现了弹道电子的自旋分离,为自旋分离器件的设计提供了理论依据.研究结果表明:通过调节结构的各个参数包括入射角、磁场强度和Rashba自旋轨道耦合系数,可以有效地调控GH位移;位移在一定条件下可以为正也可以为负;体系中弹道电子的GH位移和自旋极化态有密切关系,这个自旋相关的位移可以用来分离不同自旋极化的电子束.基于这些现象,提出了一种利用GH位移在半导体2DEG中分离不同自旋极化电子的方法,这些现象在设计自旋电子学器件上有所作用.
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