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高数值孔径(NA)光刻中,需要控制衬底反射率以减小薄膜干涉对光刻性能的影响.采用薄膜光学方法研究了高NA光刻中底层抗反膜(BARC)对衬底反射率的控制.针对硅基底对单层和双层BARC进行优化以探索满足高NA光刻要求的BARC材料光学参数容限.结果表明,当NA超过0.8时,单层BARC无法控制衬底反射率而有必要采用双层BARC.横电(TE)比横磁(TM)偏振光的衬底反射率更难以控制.NA越大,单层BARC折射系数的优化值越大.双层BARC中的顶层膜应采用低吸收率材料而底层膜应采用高吸收率材料.本研究可为高NA光刻中的BARC材料研制及衬底反射率控制提供理论依据.

参考文献

[1] Brunner T A.Optimization of optical properties of resist processes[C].SPIE,1991,1466:297-308.
[2] Huang V,Wu T S,Yang M,et al.Dual anti-reflection layers for ARC/hard-mask applications[C].SPIE,2006,6154(3Q):61543-61548.
[3] Oh S C,Kim Y C,Nah S H,et al.Optimizing of thin film interference effects in KrF lithography for 0.15 μm design rules[C].SPIE,2000,3999:926-934.
[4] James A B,Michael C,et al.Thin-film interference effects for thin resist films on a broadband scanner[C].SPIE,1998,3334:685-691.
[5] You Libing,Zhou Yi,Liang Xu,et al.Recent development of ArF excimer laser technology for lithography[J].Chinese Journal of Quantum Electronics(量子电子学报),2010,27(5):522-527 (in Chinese).
[6] Mack C A.Fundamental Principles of Optical Lithography:the Science of Microfabrication[M].Chichester:John Wiley & Sons,2007:147,162,169,219.
[7] Jung M R,Kwak E A,An I,et al.Single anti-reflection coating optimization with different polarizations for hyper numerical aperture immersion lithography[J].Japanese Journal of Applied Physics,2006,45(12):9280.
[8] Chen H L,Fan W D,Wang T J,et al.Multi-layer bottom antireflective coating structures for high NA ArF exposure system applications[C].SPIE,2002,4690:1085-1092.
[9] Yasushi S,Satoshi T,Makoto N,et al.Multi-layer BARCs for hyper-NA immersion lithography process[C].SPIE,2007,6519(65192A):65191-65192.
[10] Yu S S,Lin Burn J,Yen Anthony,et al.Thin-film optimization strategy in high numerical aperture optical lithography,part 1:principlies[J].Journal of Microlithography,Microfabrication,and Microsystems,2005,4(4):43001-43003.
[11] Smith B W,Zavyalova L,Estroff A.Benefiting from polarization-effects on high-NA imaging[C].SPIE,2004,5377:68-79.
[12] Flagello D,Geh B,et al.Polarization effects associated with hyper-numerical-aperture (> 1) lithography[J].Journal of Microlithography,Microfabrication,and Microsystems,2005,4(3):31104-31117.
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