高数值孔径(NA)光刻中,需要控制衬底反射率以减小薄膜干涉对光刻性能的影响.采用薄膜光学方法研究了高NA光刻中底层抗反膜(BARC)对衬底反射率的控制.针对硅基底对单层和双层BARC进行优化以探索满足高NA光刻要求的BARC材料光学参数容限.结果表明,当NA超过0.8时,单层BARC无法控制衬底反射率而有必要采用双层BARC.横电(TE)比横磁(TM)偏振光的衬底反射率更难以控制.NA越大,单层BARC折射系数的优化值越大.双层BARC中的顶层膜应采用低吸收率材料而底层膜应采用高吸收率材料.本研究可为高NA光刻中的BARC材料研制及衬底反射率控制提供理论依据.
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