增益开关和Q开关是获得脉冲激光运转的常用方法,对于在非线性光学研究、光通讯第二窗口装置检测、光纤传感等方面有着广泛应用前景的1.3μm波段全固体激光的脉冲产生,提出了使用增益开关的方法.首先在理论上使用速率方程对增益开关的运转进行分析,并就腔长对脉冲参数的影响进行了数值模拟.接着在实验上采用高频调制激光二极管供电电源的方法,使Nd:YVO4激光器工作在增益开关状态,即通过逐渐减小工作电源泵浦电流的脉冲宽度,使激光仅输出弛豫振荡的第一个脉冲,最后在泵浦电流脉冲宽度为5μs时,获得了平均功率80mW,光脉冲宽度200ns,频率200kHz,峰值功率2W,单脉冲能量0.4μJ的1.342μm激光的增益开关运转.
参考文献
| [1] | Fluck R,Braun B,Gini E,et al.Passively Q-switched 1.34 μm Nd:YVO4 microchip laser with semiconductor saturable-absorber mirrors[J].Opt.Lett.,1997,22(13):991-993. |
| [2] | Savitski V G,Malyarevich A M,Yumashev K V,et al.Diode-pumped Nd:YVO4 and Nd:KGd(WO4)2 1.3 μm lasers passively Q-switched with PbS-doped glass[J].AppL Phys.B,2003,79:253-256. |
| [3] | Gerschiitz F,Fischer M,Koeth J,et al.1.3 μm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation[J].Opt.Expr.,2008,16(8):5596-5601. |
| [4] | Katsuaki T,Denis G,Damien B,et al.Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer[J].Opt.Expr.,2010,18(10):10604-10608. |
| [5] | Malyarevich A M,Denisov I A,Yumashev K V,et al.V:YAG-a new passive Q-switch for diode-pumped sohd-state lasers[J].Appl.Phys.B,1998,67:555-558. |
| [6] | Jabczynski J K,Zendzian W,Mierczyk Z,et al.Chromium-doped LiCAF laser passively Q switched with a V3+:YAG crystal[J].Appl.Opt.,2001,40(36):6638-6645. |
| [7] | Agnesi A,Guandalimi A,Reali G,et al.Diode pumped Nd:YVO4 laser at 1.34 μm Q-switched and mode locked by a V3+:YAG saturable absorber[J].Opt.Comm.,2001,194:429-433. |
| [8] | Podlipensky A V,Yumashev K V,Kuleshov N V,et al.Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber[J].Appl.Phys.B,2003,76:245-247. |
| [9] | Zhang Hengli,Du Keming.Development of laser diode end-pumped slab laser with hybrid resonator[J].Chinese Journal of Quantum Electronics (量子电子学报),2010,27(4):385-392 (in Chinese). |
| [10] | Li Zhang,Yuan Yijun.Mode-locked Nd:YAG laser pumped by LD[J].Chinese Journal of Quantum Electronics (量子电子学报),2011,28(3):298-302 (in Chinese). |
| [11] | Ma Mingjun,Ye Bing,Ma Xiaomin.Electro-optically Q-switched 2.94 μm Er:YAG laser and its applications[J].Chinese Journal of Quanturn Electronics (量子电子学报),2010,27(6):688-692 (in Chinese). |
| [12] | Koechner W.Solid-State Laser Engineering[M].5th edition,1999,Springer Verlag. |
| [13] | Chen Y F,Lee L J,Huang T M,et al.Study of high-power diode-end-pumped Nd:YVO4 laser at 1.34 μm:Influence of Auger upconversion[J].Opt.Comm.,1999,163:198-202. |
| [14] | Ogilvy H,Withford M,et al.Efficient diode double-end-pumped Nd:YVO4 laser operating at 1.34μm[J].Opt.Expr.,2003,11(19):2411-2415. |
| [15] | Zayhowski J J,Ochoa J,Mooradian A.Gain-switched pulsed operation of microchip lasers[J].Opt.Lett.,1989,14(23):1318-1320. |
| [16] | Anthony S E.Lasers[M].California:Mill Valley,1986. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%