在有效质量近似基础上,考虑强的内建电场效应,变分计算了纤锌矿结构的GaN柱形量子点中带电量为-e的离子受主束缚激子(A-,X)的发光波长.结果表明,离子受主束缚激子发光波长强烈依赖于量子点的尺寸(高度和半径)、离子受主杂质的位置和垒中A1含量.随着量子点高度、半径及垒中A1含量的增加,离子受主束缚激子发光波长增大.随着离子受主杂质从量子点左边垒中沿z轴方向移至量子点左边界,发光波长先增大,在量子点的左界面附近达到极大值；随着离子受主杂质在量子点内继续右移,发光波长减小,当杂质位于量子点的右边界附近时光跃迁波长达到极小值；进一步右移离子受主杂质至量子点的右边垒中时,发光波长增大.和自由激子光跃迁波长相比,当离子受主杂质位于量子点中心的左边时,杂质的引入使发光波长增大,当离子受主杂质位于量子点中心的右边时,杂质的引入使发光波长减小.
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