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采用脉冲激光沉积(PLD)法在Si(111)衬底上制备稀土Eu3+掺杂的ZnO薄膜材料,分别在纯氧和真空气氛中进行退火处理.XRD图谱中仅观察到尖锐的ZnO(002)衍射峰,表明ZnO∶Eu3+,Li+薄膜具有良好的c轴取向.薄膜的结构参数显示:在纯氧气氛中退火的样品具有较大的晶粒尺寸且应力较小,表明在纯氧中退火的样品具有较好的结晶质量.通过光致发光谱发现,在纯氧中退火的样品的IUV/IDL比值较大,说明在纯氧中退火的样品缺陷去除更充分,结晶质量更好.当用395 nm光激发样品时,仅发现Eu3+位于595 nm附近的5Do→7F1磁偶极跃迁峰.并没有发现Eu3+在613 nm附近的特征波长发射,表明掺杂的Eu3+占据了ZnO基质反演对称中心格位.

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