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在传统工业型热丝化学气相沉积(HFCVD)反应腔内,相关工艺参数取模拟计算优化值的条件下,采用XRD,SEM及Raman光谱等分析手段研究了单晶Si (100)上较大面积金刚石薄膜的动力学生长行为,讨论了晶格取向的变化规律.结果表明:优化工艺参数条件下,在模拟计算的衬底温度和气体温度分布均匀的区域内,沉积的金刚石薄膜虽存在一定的内应力,但整体薄膜连续、均匀,几何晶形良好,质量较高,生长速率达1.8 μm/h.薄膜生长过程中晶形显露面受衬底温度和活性生长基团浓度的影响较大.

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