采用高功率直流电弧等离子体CVD工艺制备了不同厚度的金刚石自支撑膜。观察到在金刚石厚膜生长过程中出现形貌不稳定性，并往往导致膜层组织疏松，强度降低。本文从理论和实验观察两个方面进行了讨论。生长不稳定性在任何高速沉积CVD过程中都可能发生，而直流电弧等离子体的高温造成碳源高饱和度以及高温等离子体射流对衬底表面的冲击，使之比其它CVD金刚石膜沉积工艺具有更大的不稳定生长倾向。基于实验研究结果，建议在较低的气体压力下沉积，以减小金刚石厚膜生长的不稳定性。
Diamond film wafers with different thickness were prepared by high power DC arc plasma jet CVD method. Growth instabilities were observed which often led to loosely packed diamond films with a very bad quality. Theoretical and experimental aspects responsible for the instabilities were discussed. It is believed that this is a common phenomenon,which can occur in any CVD process with a relatively high film growth rate.As a result of the high supersaturation of active species due to the high temperature arc jet,and its ballistic nature,it is more liable for the tendency of growth instabilities to occur in the case of DC arc plasma jet than other CVD processes.Based on the experimental observations of the effect of chamber pressure,it is strongly suggested that it is a good practice to deposit thick diamond films in lower pressures in order to avoid growth instabilities.
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