使用转移矩阵方法计算了GaN/C60多层膜一维光子晶体的带隙结构.计算结果表明,由厚度分别为21nm、49nm的GaN、C60薄膜组成的多层膜结构,在中心带隙为6.46eV处有一不完全的光子带隙存在,反射率最高可达64.3%.
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