采用355nm脉冲激光沉积(PLD)技术,以Li6.16V0.61Si0.39O5.36为靶材制备Li2O-V2O5-SiO2薄膜,考察了反应气氛压强、激光能量密度、基片温度等对薄膜结构和性质的影响.结果表明,随着基片温度升高及激光能量密度增大Li2O-V2O5-SiO2薄膜更致密,且室温离子电导率随之增大.在O2压强6.7Pa、激光能量密度12J/cm2和基片温度300℃条件下制备了室温离子电导率为4×10-7S/cm、离子迁移数接近1.O(tion＞99.99%)、厚度均匀、无针孔和裂缝的非晶态Li2O-V2O5-SiO3薄膜.
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