采用射频磁控溅射法成功制各了(111)取向的Pt薄膜.在研究退火工艺对Pt薄膜(111)取向生长的影响基础上,着重研究了退火工艺对Pt薄膜与缓冲层Pr薄膜间的互扩散及薄膜物相、结构的影响规律.结果表明:250℃保温5至25小时,Pt薄膜沿(111)择优取向生长,但保温时间对取向生长的影响不大,此时薄膜为立方结构;当500℃再分别保温2h和4h时,最初沿(111)取向生长的Pt薄膜与Pr薄膜发生互扩散现象,生成BFe结构的PrPt相,保温2h时,除生成PrPt相外,还可能存在一定量的取向Pt,保温4h时,薄膜中只存在PrPt相.本实验为制备(111)强烈取向Pt薄膜开拓了一条新的工艺及方法,同时为控制Pt薄膜的结构与性能、进行开发应用提供了实验依据.
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