采用原位分散聚合法制备了聚酰亚胺(PI)/介孔二氧化硅(MCM-41)复合薄膜.利用X射线衍射(XRD)、透射电子显微镜(TEM)观察到MCM-41粒子规整的六方立体结构,通过扫描电子显微镜(SEM)研究了MCM-41粒子在聚酰亚胺基体中的分散状态以及MCM-41粒子添加量对该复合薄膜介电性能的影响.结果表明:PI复合薄膜的体积电阻率和电气强度都有不同程度的提高.与纯PI相比,MCM-41含量为3.0%时,复合薄膜体积电阻率提高了一个数量级,由2.8 X 1014Ω·m增至2.1×1015Ω·m,同时介电常数从3.26降至2.86,介质损耗因数无显著变化.
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