采用热刺激电流(TSC)对自制的4种不同纳米Al2O3含量的聚酰亚胺(PI)薄膜进行测试,发现复合材料的热刺激电流峰值随着纳米Al2O3填充量的增加而降低,当纳米Al2O3的填充量大于10%后,热刺激电流峰的峰值随着温度升高持续一段时间后才出现下降趋势.对4种薄膜的TSC高温峰分别进行计算,得出薄膜中陷阱电荷的数量.并结合纳米复合材料的多核模型和陷阱理论,得出该现象的出现是由于PI/Al2O3纳米复合薄膜中界面结构影响了载流子输运过程造成的.
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