采用湿化学工艺在硅衬底上成功地制备了结构致密、均匀且无龟裂的LaxSr1-xTiO2(LSTO)薄膜.金属硝酸盐(或氯化物)的冰醋酸溶液经回流再加入乙酸酐除去无机阴离子和结晶水,而形成的金属醋酸盐与适当的络合剂形成的多配体络合物经部分水解生成的羟基化合物M(OH)2(L)x(L=C3H5(OH)3或AcAc,M=Sr或Ti或La),经羟基聚合形成LaxSr1-xTiO3(LSTO)簇状溶胶.丙三醇抑制了羟基金属过度羟基聚合,甲基纤维素(MCL)使LSTO溶胶具有网状结构.LSTO凝胶薄膜经过575～725℃/60min退火形成立方钙钛矿结构.用XRD、SEM对薄膜结构和形貌表征.室温下LSTO薄膜的电阻率为54μΩ·cm,而在160 K到室温之间薄膜电阻率随温度的变化遵从ρ=ρ0+AT2.分析结果表明:La3+离子的施主掺杂实现了SrTiO3的n-型半导体化.
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