以Sr(OOCCH3)2·H2O,In(NO3)3·41/2H2O及Ti(OC4H9)4为原料,用溶胶-凝胶工艺制备了SrInx-Ti1-xO3(SITO)薄膜.SITO凝胶薄膜经过575~725℃/60 min退火形成立方钙钛矿结构.用XRD、SEM对薄膜结构和形貌表征.霍尔测定表明In-STO薄膜属于空穴导电的p-型半导体.SITO薄膜形貌与溶胶的陈化时间有关,最佳陈化时间为5~20h.
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