以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法(PECVD)制备出轻掺硼非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率，降低了非晶氢硅薄膜的光、暗电导比，并促进了非晶氢硅薄膜中硅微晶粒的生长。红外吸收谱研究预示了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对P型掺杂有贡献。
Using hydrogen-diluted SiH4 and B2H6 as the precursor gases, boron lightly doped amorphous silicon films were obtaine d by the plasma-enhanced chemical vapor deposition. According to the results fr om X-ray diffraction, Atom Force Microscopy(AFM) and photo/dark photoconductivi ty measurements, lightly doping of boron increases the dark conductivity, decrea ses the photo/dark ratio and enhances the crystallization in amorphous silicon f ilms. Results from FTIR confirm that various kinds of complex were formed among boron, silicon and hydrogen atoms. Only a small amount of boron atom act as acce ptor.
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