根据实验观察分析提出了金刚石二次形核机制，此机制认为二次形核很容易在(100)晶面上和晶界上形成。通过比较(100)面的二次形核和形成新生长台阶的系统自由能差，可知当气氛中的碳氢基团浓度较大时，粘附在基底的碳氢基团发生堆集，如果堆集碳氢基团高度尺寸较大时将形成二次晶核。也对晶界二次形核的系统自由能差进行了推导，结果表明晶界二次形核是自发的，将导致体系自由能的下降。
We describe a sceond nucleation mechanism of CVD diamond films according to experimental observations, which indicates second nucleations are opt to form at crystal boundaries and (100) faces.Free energy of a second nucleation contrasted with that of Forming a new growth step,it is showed that when carbon-hydrogen radical concentration is higher,carbon-hydrogen radical on substrate will heap up, at this time a second nucleation can form.Free energy of a second nucleation forming on crystal boundary is also calculated,which shows a second nucleation on crystal bonudary is spontaneous and it causes system free energy decrease.
参考文献
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