表面光电压法研究抛光硅片制造中铁沾污的来源

材料科学与工程学报, 2001, 19(1): 70-66. doi: 10.3969/j.issn.1673-2812.2001.01.018

表面光电压法研究抛光硅片制造中铁沾污的来源

罗俊一 ^1, , 沈益军 ^2, , 李刚 ^3, , 刘培东 ^4, , 张锦心 ^5, , 包宗明 ^6, , 黄宜平 ^7,

1.复旦大学电子工程系,上海先进半导体有限公司,

2.浙江海纳半导体有限公司,

3.浙江海纳半导体有限公司,

4.浙江海纳半导体有限公司,

5.浙江海纳半导体有限公司,

6.复旦大学电子工程系,

7.复旦大学电子工程系,

关键词：表面光电压法 , 铁杂质 , 抛光硅片

Investigation on the Iron Contamination Sources during the Fabrication of Polished Silicon Wafers

铁杂质是硅片制造过程中常见的重金属沾污，表面光电压(SPV)法可很好地用于测定P型硅中铁杂质。本文通过SPV法测试不同流程制造的P型抛光硅片中的铁沾污，找到了在P型抛光硅片制造工艺过程中引入铁沾污的主要来源。

The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer. In this work, the iron contamination on the polished silicon wafers fabricated by different procedures has been probed by SPV, and then the dominant iron contamination sources during the fabrication process have been found.

参考文献

[1]	[P].Lagowski US 005177351A
[2]	[J].Journal of the Electrochemical Society,1993,140:1152.
[3]	Edward S Nartowitz;Alivin M Goodman .Edward S Nartowitz and Alivin M Goodman[J].Journal of the Electrochemical Society,1985,132(12):2992.
[4]	A Buczkowski;G Rozgonyi etc.[J].Journal of the Electrochemical Society,1993,140:3240.
[5]	Worth B .Henley and Deepak A[J].Ramappa Appl Phys,1997,82(02):589.
[6]	EickeR .[J].WeberAppl Phys,1983,A30:1-22.
[7]	Masataka Hourai et al.[J].Japanese Journal of Applied Physics,1988,27:L2361-2363.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网