采用零蠕变法测量Si(111)单晶片上沉积的TiAl/Al多层膜界面自由能.其实验方法为:采用基片曲率法测量TiAl/Al多层膜升温退火过程中的应力变化,分别在350℃、400℃、450℃和500℃保温,发现500℃时多层膜达到平衡状态,最终的平衡应力为0.57MPa,计算TiAl/Al的界面自由能γint为0.19J/m2.
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