用二次生长法制备MFI型分子筛膜,并用XRD和SEM对其进行了表征,通过测试氮气、氧气、氩气、氖气、氮气在分子筛膜上吸附的相对密度和相对压力相关数据,根据数据绘制的吸附等温线,都类似于反正切曲线.同时,也应用GCMC法,计算机模拟这些数据,绘制等温线,并与实验结果进行比较.结果证实GCMC法的模拟结果是可靠的.GCMC法模拟,可以直接应用于这类研究.由于吸附等温线类似于反正切曲线,就以类似于反正切函数的线性函数形式,建立吸附等温线的数学模型,用以定量研究该分子筛膜的吸附特性.进行相关与回归计算发现,相对密度与压力差的反正切值之间,都呈高度正相关(r≥0.9664).回归方程的回归系数为吸附特征常数,回归方程中所有的参数之间,也呈高度正相关(r≥0.9582),而且都有一个共同特点,即它们的值存在这样的顺序关系:氧<氩<氮<氖<氦.这样,通过分子筛膜吸附特征常数和这些气体的分子结构,有助于探讨MFI分子筛膜的吸附机理.
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