以醋酸镍为原料,用溶胶-凝胶法在石英衬底上制备了氧化镍薄膜,并利用X射线衍射、紫外-可见吸收谱对样品进行了表征.结果表明,当热处理温度低于800℃时,随着温度升高,石英衬底上生长的氧化镍薄膜的晶粒逐渐长大,其(200)面对应的衍射峰的强度增加,取向度提高.当热处理温度超过800℃后,晶粒尺寸不但不再增加,反而略有下降,同时,取向度也略有下降.因此就晶粒大小及取向度而言,最佳热处理温度为800℃,此时薄膜的晶粒尺寸最大,(200)取向度最高.紫外-可见吸收谱分析表明,氧化镍薄膜的禁带宽度也随着处理温度的变化而变化,其变化趋势与晶粒尺寸的变化正好相反,即禁带宽度在热处理温度为800℃时有极小值.纳米尺寸粒子中存在的量子约束效应可以说明这一变化趋势.
参考文献
[1] | S W Lovesey .[J].Journal of Physics:Condensed Matter,1998,10:2505-2513. |
[2] | S Hufner .[J].Advances in Physics,1994,43:183. |
[3] | M Chigance;M Ishikawa .[J].Electrochimica Acta,1997,42:1515. |
[4] | M.Martini;G.E.S.Brito;M.C.A.Fantini;A.Gorenstein .Electrochromic properties of NiO-based thin films prepared by sol-gel and dip coating[J].Electrochimica Acta,2001(13/14):2275-2279. |
[5] | F FFerrira;M H Tabacniks;M C A Fantini .[J].Solid State Ionics,1996,86-88:971. |
[6] | 卢志红;邱进军;荀坤 等.NiO/NiFe双层膜的制备及其交换耦合作用研究[J].功能材料与器件学报,1998,4:268. |
[7] | I. Hotovy;J. Huran;L. Spiess;R. Capkovic;S. Hascik .Preparation and characterization of NiO thin films for gas sensor applications[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2000(2/3):300-307. |
[8] | I Hotovy;J Huran;L Spiess et al.[J].Sensors and Actuators,1999,57:147. |
[9] | Sasia;K G Gopchandrana;P K Manoj .[J].真空,2003,68:149. |
[10] | 丘思畴;舒兴胜 .电致变色材料及应用[J].功能材料,1994,25:104. |
[11] | O Kohmoto;H Nakagawa;F Ono;et al [J] .[J].Journal of Magnetism and Magnetic Materials,2001,1627:226-230. |
[12] | J.K.Kang;S.W.Rhee .[J].Thin Solid Films,2001,391:57. |
[13] | N Kitakatus;V Maurice;C Hinnen .[J].Surface Science,1998,407:356. |
[14] | S Y Wang;W Wang;W Z Wang et al.[J].Materials Science and Engineering,2002,90:133. |
[15] | J.L.GarciaMiquel;Q.Zhang;S.J.Allen et al.[J].THIN SOLID FILMS,2003,424:165. |
[16] | P S Patil;L D Kadam .[J].Applied Surface Science,2002,199:211. |
[17] | A.E.J.Gonzalez;J.G.Cambray .Deposition of NiO_x thin films by sol-gel technique[J].Surface Engineering,2000(1):73-76. |
[18] | Y R Park;K J Kim .[J].Journal of Crystal Growth,2003,258:380. |
[19] | F K Lotgering .[J].Journal of Radioanalytical and Nuclear Chemistry,1959,9:113. |
[20] | Y Xie;W Z Wang;Y T Qian et al.[J].Journal of Crystal Growth,1996,167:656. |
[21] | Z GJi;K Lu;Y L;Song,ZZ Ye .[J].Journal of Crystal Growth,2003,255:353. |
[22] | Pejova;T Kocareva;M Najdoski;I Grozdanov .[J].Applied Surface Science,2000,165:271. |
[23] | Pejova;A Tanusevski;I Grozdanova .[J].Journal of Solid State Chemistry,2003,172:381. |
[24] | J Nayak;S N sahu .[J].Applied Surface Science,2001,182:407. |
[25] | R Thielsh;T Bohme;R Reiche;D Schlafer et al.[J].Nano-Structured Materials,1998,10:131. |
[26] | M G KrishnaandA K .[J].International Journal of Modern Physics B,2001,15:191. |
[27] | P K Nair;O Gomez Daza;A Arias-Carbajal Reddigos .Formation of conductive CdO layer on CdS thin films during air heating[J].Semiconductor Science and Technology,2001(8):651-656. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%