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采用沉淀法生长了不同粒径且性能良好的氧化锌纳米晶体,探讨了晶粒尺寸与煅烧温度的变化关系,研究了ZnO纳米晶体的生长机理.通过实验验证了在中间产物Zn(OH)2中加入NH4HCO3后,ZnO纳米晶体实现了局域生长,很好地阻碍了晶核的过度生长,从而使生成的ZnO纳米晶体保持很小的粒径.煅烧温度较低时,ZnO纳米晶体的生长模式为正常扩散生长,煅烧温度在800℃时,发生了竞争生长现象.

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