合成了具有微观层状结构的纳米级氧化石墨,并在100℃以下通过插层反应制备得氧化石墨插层SnO2(GIT),也具有层状结构;通过AFM、FE-SEM、XRD、DSC-TG对其形貌、微观结构、物相、热性能进行分析;在SnO2基体材料中掺入适量GIT插层材料,经过适当的热处理,制备GIT-SnO2复合气敏元件.气敏性能测试表明,材料具有较低的电阻,在200-300℃范围内对丁烷具有较高的灵敏度.
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