采用FCVA工艺成功制备了ta-C薄膜,采用ECR-CVD工艺对部分ta-C薄膜试样进行氮等离子体处理,制备了ta-C:N薄膜.对两种薄膜的表面粗糙度与元素含量、沉积工艺参数之间的关系进行了研究.通过AFM对薄膜表面粗糙度进行了分析,通过XPS对薄膜的元素含量进行了分析.试验结果显示,沉积条件对薄膜厚度和元素含量具有明显的影响.对ta-C薄膜进行氮等离子体处理后,其表面粗糙度有一个明显的起伏变化.研究结果表明,氮能改变DLC薄膜表面的粗糙度.元素含量也随着薄膜的厚度变化而变化.
Ta-C flms were prepared by filtered cathodic vacuum arc (FCVA) process. Ta-C:N films were developed on the basis of ta-C films through nitrogen plasma treatment with Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) process. The relations between the ta-C and ta-C: N surface roughness and elements content, certain deposition parameters, were investigated in this paper. Also, two kinds of films were contrastively investigated on roughness and elements content, through atomic force microscopy (AFM)and X-Ray photoelectron spectroscopy (XPS) respectively. The results show that the films thickness and elements content are apparently affected by the deposition conditions. The surface roughness has an apparent fluctuation when the ta-C films are treated by the nitrogen.plasma. The surface roughness varies after the nitrogen was doped. Elements content also changes with the films' thickness.
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