脉冲激光沉积法制备的Ge(S90Se10)2硫系薄膜中的光致漂白效应研究

材料科学与工程学报, 2007, 25(1): 18-21. doi: 10.3969/j.issn.1673-2812.2007.01.005

脉冲激光沉积法制备的Ge(S90Se10)2硫系薄膜中的光致漂白效应研究

周学东 ^1, , 董国平 ^2, , 肖秀娣 ^3, , 陶海征 ^4, , 赵修建 ^5, , 潘瑞琨 ^6,

1.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

2.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

3.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

4.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

5.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

6.武汉理工大学硅酸盐材料工程教育部重点实验室,湖北,武汉,430070

基金项目: Opening Fund of Key Laboratory of Silicate Materials Science and Engineering ( Wuhan University of Technology) 国家自然科学基金(50125205) 教育部长江学者和创新团队发展计划(IRT0547) 教育部资助项目(SYSJJ2004-14)

关键词：激光脉冲沉积法(PLD) , 光致漂白 , Ge(S90Se10)2薄膜 , 能隙

Photo-bleaching in Ge(S90Se10)2 Chalcogenide Films Prepared by Pulsed Laser Deposition

Keywords： PLD , photo-bleaching , Ge(S90Se10)2 film , Eg

运用激光脉冲沉积法(PLd)制备了Ge(S90Se10)2薄膜,通过运用紫外汞灯对制备的薄膜进行不同时间的辐照,我们确定了达到饱和状态所需要的辐照时间(90分钟).当薄膜处于饱和状态时,巨大的光致漂白效应被观察到了(△E=0.36ev).此外,在本文中,我们也对光致漂白效应的机理进行了阐述,一种新型的光电子材料被发现了.

Using the pulsed laser deposition (PLD) technique, Ge(S90Se10)2 films were prepared. After illuminating the film for different time with Hg arc lamp, the saturation state (illuminated time = 90min) was ascertained, and the huge photo-bleaching phenomenon is observed (△E = 0.36ev) at the saturation state. Furthermore, the mechanism of photo-bleaching is also studied. A novel type of photoelectron materials is discovered.

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