利用正交设计分析了直流磁控溅射中溅射气压,衬底温度和N2浓度对SiO2/Si衬底上制备的AIN薄膜的(002)择优取向的影响水平.利用X-射线衍射(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)对薄膜的晶向和表面形貌进行了分析,得到制备高度择优取向的A1N薄膜的最佳期望条件:衬底温度为250C,溅射气压为2Pa,N2浓度为75%;并得出了氮气浓度对薄膜的(002)择优取向的影响较大.具有择优取向的AIN薄膜的折射率约为2.06.
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