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当前的CMP磨损模型中,大多数主要是基于理论分析以及CMP中宏观影响因素所建立,并且都欠缺微观试验的证明.本文提出使用原子力显微镜(AFM)作为CMP中单个纳米磨粒模拟的方法,来验证模拟实验中载荷与扫描速率对微观磨损的影响,并依据此模拟试验的结果探讨了CMP磨损机理.

参考文献

[1] S R Runnels .Feature-scale fluid-based erosion modeling for chemical mechanical polishing[J].Journal of the Electrochemical Society,1994,141(07):1900-1904.
[2] Yu T K;Yu C C;Orlowski M.A statistical ploishing pad model for chemical mechanical polishing[A].Washington DC:5-8.
[3] Shi FG.;Zhao B. .Modeling of chemical-mechanical polishing with soft pads[J].Applied physics, A. Materials science & processing,1998(2):249-252.
[4] zhao Y W;Chang L;Kim S H .A mathematical model for chemical mechanical polishing based On formation and removal of weakly boned molecular species[J].Wear,2003,254:332-339.
[5] Jongwon Seok;Cyriaque P. Sukam;Andrew T. Kim;John A. Tichy;Timothy S. Cale .Multiscale material removal modeling of chemical mechanical polishing[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,2003(3/4):307-320.
[6] T K Berdyyeva;S B Emery;I Yu Sololov .Situ AFM Stuay of Surface Layer Removal During Copper CMP[J].Electrochemical and Solid-State Letters,2003,6(07):G91-G94.
[7] Bifao T G;Bow T A;Scattergood R oet .Ducticle-regime grinding:A new technology for machining brittle material[J].Journal of Engineering for Industry,1991,113:184-189.
[8] Liangchi Zhang;Hiroaki Tanaka .Atomic scale deformation in silicon monocrystals induced by two-body and three-body contact sliding[J].Tribology International,1998(8):425-433.
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