利用简单的化学镀技术,通过改进前处理工艺,实现了(SiC)p的表面化学改性.通过对反应条件的分析比较,确定了最佳温度为40℃、pH值9.0;采用SEM、EDS和XRD,对修饰前、后(SiC)p的物相、晶形、成分等进行了研究,获得了镀层连续,无光滑(SiC)p裸露的较高质量的改性碳化硅复合粉体[简写为(Ni/SiC)p].同时对(SiC)p表面改性的热力学机理给出初步分析,并从理论上验证了反应条件.
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