材料期刊网

以硫化镉（CdS ）为主要原料，氯化镉（C dC l2）为助熔剂，采用干压成型、真空烧结的方式制备CdS陶瓷靶材。探讨了原料性质、烧结温度、CdCl2添加量对靶材相对密度、烧结线收缩率、显气孔率及表面电阻率的影响。用阿基米德法测定靶材密度、用四探针测试仪测试靶材表面电阻率、用X RD测试靶材晶相结构、用SEM 观察靶材微观形貌。实验结果表明，靶材试样的晶相主要为六方相CdS ，晶粒均匀（晶粒大小在3～8μm之间），密度达到45．5 g／cm3，显气孔率45．9％，表面电阻率892．Ω?cm ，能满足磁控溅射镀膜工艺对靶材的指标要求。

Cadmium sulfide (CdS) target was developed by dry‐pressing molding and vacuum sintering with CdS raw material and CdCl2 as fusion .Raw material property and the influence of sintering temperature and CdCl2 content on relative density ,linear shrinking ,apparent porosity and resistivity of CdS target were studied in this paper .The density of target was measured using Archimedes method ,the resistivity was measured by SX1934 four probe instruments ,the phase structure of target was analyzed by X‐ray diffractometer with a monochroma‐ted Cu KαX‐ray source ,and the fracture morphology was observed by SEM photograph .Specifications were as following :the phase structure was hexagonal Wurtzite ,the density was 4 5.5 g/cm3 ,the pore ratio was 4 5.9% , the resistivity was 89 2. Ω?cm ,the crystal size was homogeneous (3‐8 μm) ,these properties can meet sputter coating requirements .