采用金属有机化学气相沉积方法在蓝宝石衬底上外延生长GaN基材料,设计并优化外延生长条件,探索单层N型GaN(N-GaN)、多量子阱(MQW)、电子阻挡层(P-AlGaN)、P型GaN(P-GaN)材料对发光二极管(LED)器件的光电性能的影响.通过X射线衍射仪(XRD)、电致发光谱(EL)、光致发光谱(PL)等测试设备对外延片进行表征.结果表明:经优化Si掺N-GaN和垒层(QB),获得较好的(102)、(002)半峰宽,正向电压从4.46 V分别降至3.85 V、3.47V,发光强度从4.86 mV提高到6.14 mV.然后对P型AlGaN层进行Mg掺杂优化,正向电压下降至3.35V,发光强度提高到6.14 mV.最后对P-GaN层进行了生长温度及退火温度的优化,结果发现正向电压从3.16V提高至3.32V,发光强度提高至6.70 mV左右.全自动探针台在测试电流20 mA的条件下,对芯片的电压和发光强度进行了测试,电压大致从4.5V降到3.8V左右,下降了16％.发光强度大概从110 mcd提高到135 mcd,提高了 20％左右.结合实验结果与理论综合分析,解释了N-GaN层和QB层Si掺量,P-AlGaN层Mg掺量,P-GaN层生长温度及活化温度对正向电压和亮度的影响,从而为高质量GaN薄膜材料外延生长及高性能的LED提供了更好的实验指导与理论支持.
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