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近年来,以石墨烯为代表的新型二维晶体材料由于其独特的微观结构和新颖的物理化学性能得到了诸多领域研究者的广泛关注.重点介绍了低加速电压下原子分辨率的原子序数衬度成像(Z衬度像)在二维晶体材料微观结构表征中的应用.装备有球差矫正器的新型电子显微镜在低加速电压下(60 kV)的分辨率可以达到~0.1 nm,避免了对B,C,N和O等轻元素原子的Knock-on损伤.通过原子分辨率的电子能量损失谱分析验证了Z衬度像在二维晶体观测中的可靠性.利用球差矫正电子显微成像技术可在二维晶体中快速准确地判断掺杂原子的种类,可以研究二维晶体材料中原子尺度的界面和缺陷结构.球差矫正电子显微学在新型二维晶体材料研究中的最新进展将对晶体结构学、材料科学、物理学等产生重大影响.

参考文献

[1] Crewe A V;Wall J;Langmore J .Visibility of Single Atoms[J].SCIENCE,1970,168(3 937):1 338-1 340.
[2] Pennycook S J;Boatner L A .Chemically Sensitive Structure-Imaging with a Scanning Transmission Electron Microscope[J].NATURE,1988,336(6 199):565-567.
[3] Muller DA;Kourkoutis LF;Murfitt M;Song JH;Hwang HY;Silcox J;Dellby N;Krivanek OL .Atomic-scale chemical imaging of composition and bonding by aberration-corrected microscopy.[J].Science,2008(5866):1073-1076.
[4] Novoselov K S;Geim A K;Morozov S V et al.Electric Field Effect in Atomically Thin Carbon Films[J].SCIENCE,2004,306(5 696):666-669.
[5] Zobelli A;Gloter A;Ewels CP;Seifert G;Colliex C .Electron knock-on cross section of carbon and boron nitride nanotubes[J].Physical review, B. Condensed matter and materials physics,2007(24):5402-1-5402-9-0.
[6] Alem N;Erni R;Kisielowski C et al.Atomically Thin Hexagonal Boron Nitride Probed by Ultrahigh-Resolution Transmission Electron Microscopy[J].Physical Review B,2009,80(15):155 425.
[7] Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy[J].Nature,2010(Mar.25 TN.7288):571.
[8] Hashimoto A;Suenaga K;Gloter A et al.Direct Evidence for Atomic Defects in Graphene Layers[J].NATURE,2004,430(7 002):870-873.
[9] Guo, J.;Morris, J.R.;Ihm, Y.;Contescu, C.I.;Gallego, N.C.;Duscher, G.;Pennycook, S.J.;Chisholm, M.F. .Topological defects: Origin of nanopores and enhanced adsorption performance in nanoporous carbon[J].Small,2012(21):3283-3288.
[10] Suenaga K;Koshino M .Atom-by-Atom Spectroscopy at Graphene Edge[J].NATURE,2010,468(7 327):1 088-1 090.
[11] Ramasse Q M;Seabourne C R;Kepaptsoglou D M et al.Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy[J].NANO LETTERS,2012,13(10):4 989-4 995.
[12] Liu P;Guo J;Liu L et al.Direct Observation of Defects in Hexagonal Boron Nitride Monolayer[J].Microscopy and Microanalysis,2014,20(S3):1 738-1 740.
[13] Yi-Hsien Lee;Xin-Quan Zhang;Wenjing Zhang;Mu-Tung Chang;Cheng-Te Lin;Kai-Di Chang;Ya-Chu Yu;Jacob Tse-Wei Wang;Chia-Seng Chang;Lain-Jong Li;Tsung-Wu Lin .Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition[J].Advanced Materials,2012(17):2320-2325.
[14] Zhou, W.;Zou, X.;Najmaei, S.;Liu, Z.;Shi, Y.;Kong, J.;Lou, J.;Ajayan, P.M.;Yakobson, B.I.;Idrobo, J.-C. .Intrinsic structural defects in monolayer molybdenum disulfide[J].Nano letters,2013(6):2615-2622.
[15] Sina Najmaei;Zheng Liu;Wu Zhou .Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers[J].Nature materials,2013(8):754-759.
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