碲化铋基热电半导体是中低温区高性能热电转换材料,在微电子、计算机以及航天等领域广泛用于局部致冷与精确温控,在工业余废热回收温差发电等领域具有良好的应用前景.通过合金化和掺杂的方法,可以增强声子散射降低晶格热导率,优化载流子浓度提高电性能,从而提高碲化铋基材料的热电性能.在简述碲化铋晶体结构和能带结构基础上,综述了合金化和掺杂提高碲化铋基半导体的热电性能、碲化铋基半导体晶体生长的方法及空间微重力对碲化铋基晶体区熔生长的影响,并展望了利用天宫二号空间实验室开展碲化铋基晶体生长及其相关研究.
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, ChinaBismuth telluride based thermoelectric semiconductors are high performance thermoelectric materials over the low to medium temperature range (~300 degree C), which have found important applications in local thermoelectric cooling and precise temperature control in the fields of micro-electronics, computer and aerospace, and have prospect in industrial waste heat recovery for thermoelectric generation.Alloying and doping are effective ways to improve thermoelectric properties of bismuth telluride by enhancing the phonon scattering to reduce the lattice thermal conductivity, and optimizing the carrier concentration to increase power factor.In this article, after brief introduction to the crystal structure and band structure of bismuth telluride, we reviewed the enhancement of thermoelectric properties of bismuth telluride by alloying and doping, the growth of the bismuth telluride crystals as well as the effect of space microgravity on the growth of bismuth telluride crystals by zone melting process.We also prospected the growth of a bismuth telluride based crystal on board the TG-2 Space Lab and its related research.
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