用阳极氧化法在钛片表面制备空白TiO2纳米管阵列,用电化学阴极还原法在其表面沉积锰,通过正交试验考察沉积条件对锰修饰TiO2纳米管阵列光电响应的影响.结果表明,锰的表面修饰可以增强TiO2纳米管阵列对可见光的响应,在0.5 V(vs.SCE)的偏电压下,光电流显著增大.沉积时间和沉积电压是影响锰沉积的主要因素,锰沉积的最佳条件为:沉积时间30 s、电压-2 V、锰离子浓度10 mmol/L.
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