用两步法制备了SnS薄膜,首先在玻璃衬底上用磁控溅射法沉积一层Sn薄膜,然后在220℃下加热炉中硫化60 min.对该薄膜进行结构、表面形貌和光电性能分析,结果表明:制备的SnS薄膜为p型导电,有明显的(040)方向择优取向；薄膜表面致密,S和Sn原子非常接近化学计量比；薄膜呈现高于5×104 cm-1的吸收系数和持续光电导效应,其直接带隙约为1.23 eV,适合作为太阳能电池的吸收层材料和用于制作光敏器件.
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