通过自由基共聚合,制备了前驱体共聚物聚对特丁氧酰氧基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯,该共聚物可以通过热解而部分脱除酚羟基上的保护基,得到目标共聚物聚对羟基苯乙烯-共-N-羟基-5-降冰片烯-2,3-二甲酰亚胺甲基丙烯酸酯-共-对特丁氧酰氧基苯乙烯.通过对具有合适分子量的目标共聚物的有机溶剂溶解性、热性能、成膜性、抗干蚀刻能力和在248 nm处光学吸收(为0.212 μm-1)性能进行研究,表明该聚合物能满足248 nm光刻胶成膜树脂的要求;此外,目标共聚物还具有酸致脱保性能.具有合适分子量和脱保率的目标共聚物,通过对其酸解留膜率的测试,推测其可能满足248 nm光刻胶的曝光显影工艺过程.
参考文献
[1] | John H B .Optical lithography-thirty years and three orders of magnitude[J].Proceedings of Spie,1997,3049:14-27. |
[2] | Ito H .Chemically amplified resist:past,present and future[J].Proceedings of Spie,1999,3678:2-12. |
[3] | 穆启道;曹立新 .光刻技术的发展与光刻胶的应用[J].集成电路应用,2003,6:69-75. |
[4] | 吴雄杰,裘霞敏.我国电子化学品产业的发展现状及前景[J].浙江化工,2003(06):25-27. |
[5] | 夏伟如,林保平,夏敏,潘英.正性光致抗蚀剂用酚醛树脂的制备[J].化工时刊,2002(04):21-24. |
[6] | Strurtevant J;Conley W E .Photosensitization in dyed and undyed APEXE DUV resist[J].Proceedings of Spie,1996,2724:273-279. |
[7] | Thackery J W;Orsula G W .Deep UV photoresist for 248 nm excimer laser photolithography[J].Proceedings of Spie,1989,1086:34-44. |
[8] | Hayashi K I;Kikuchi H .Charateristics of new KrF excimer laser resist[J].Proceedings of Spie,1990,1262:468-475. |
[9] | Harry F .Evaluation of resist materials for KrF excimer laser lithography[J].Proceedings of Spie,1990,1262:331-343. |
[10] | Robert D A;Quan P L;Gregory M W et al.New Chemistry in the design of chemistry amplified positive resists[J].Proceedings of SPIE,1993,1925:246-256. |
[11] | Willson C G;Dammel R A;Reiser A et al.Photoresist materials:a historical perspective[J].Proceedings of Spie,1997,3049:28-41. |
[12] | Ito H;Willson C G .Positive/negative mid UV resist with high thermal stability[J].Proceedings of Spie,1987,771:24-30. |
[13] | Ito H;Pcdcrson L A .Sensitive electron beam resist systems based on acid-catalyzed deprotection[J].Proceedings of Spie,1989,1086:11-17. |
[14] | Colley W;Breyta G;Brunsvold B et al.The lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)[J].Proceedings of SPIE,1996,2724:34-60. |
[15] | Tanabe T;Kobayashi Y;Tsuji A .PED stabilized chemically amplified photoresist[J].Proceedings of Spie,1996,2724:61-69. |
[16] | Choi S J;Jung S Y;Kim C H et al.Design and properties of new deep-UV positive photoresist[J].Proceedings of Spie,1996,2724:323-331. |
[17] | 刘建国,郑家燊,李平.聚羟基苯乙烯在光致抗蚀剂中的应用及其合成[J].感光科学与光化学,2006(01):67-74. |
[18] | Frechet J M J;Eichler E .Poly (p-tert-butoxycarbonyloxystyrene):a convenient precursor to p-hydroxystrene resins[J].Polymer,1983,24(08):995-1000. |
[19] | 刘建国,李平,刘和平,李萍,郑家燊,张晓红.对特丁氧酰氧基苯乙烯的制备新方法[J].应用化学,2008(04):424-428. |
[20] | 刘建国,李平,李萍,郑家燊.聚对羟基苯乙烯单体的中间体--对特丁氧酰氧基苯乙烯合成方法的改进[J].应用化学,2007(03):361-364. |
[21] | 陆承勋;王东法;冯新德 等.N-丙烯酰氧-5-降冰片烯-2,3-双甲酰亚胺的合成及聚合[J].科学通报,1981,26(04):214-216. |
[22] | 复旦大学高分子科学系高分子科学研究所.高分子实验技术[M].上海:复旦大学出版社,1996:318. |
[23] | 王春伟,李弘,朱晓夏.化学放大光刻胶高分子材料研究进展[J].高分子通报,2005(02):70-80. |
[24] | 武玲;余尚先 .正性光致抗蚀剂主要成膜树脂-酚醛树脂[J].感光材料,1994,4:3-8,43. |
[25] | Conley W .Consideration in the development of deep UV photoresist material & processes[J].Proceedings of Spie,1995,2438:40-52. |
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