采用一种简单的热蒸发法制备了高度有序的ZnO-SnO2异质外延枝状纳米结构.制备过程分两步进行:首先,在氧化铝片基底上制备SnO2纳米线;然后,以此SnO2纳米线为模板在其上生长ZnO纳米线.用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射(XRD)等手段对产物的形貌、结构进行了表征.XRD表征结果证实第一步和第二步生长的产物分别为SnO2和ZnO.SEM观察结果表明,第一步热蒸发得到直径约100 nm、长度达几十微米的SnO2纳米线,第二步热蒸发后得到以第一步SnO2纳米线为主干、沿四个方向有序排列的枝状ZnO纳米结构.TEM观察结果表明,ZnO枝状纳米线沿[001]方向由SnO2纳米线(-101)晶面外延生长.所制备的枝状纳米结构由于具有巨大的比表面积,且外延异质结可以促进电荷的分离和快速转移,因此非常适合于光催化应用.该ZnO-SnO2异质外延枝状纳米结构用于光催化降解甲基橙,表现出优异的性能.
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