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纳机电系统(NMES)由于具有体积小、智能化、可靠性高等优点而被广泛研究.其中纳米线谐振子的本征频率能够达到MHz甚至GHz,可应用于各种高性能的质量传感器、谐振器、滤波器等.但是,要制备形貌规则可控的纳米线谐振子,对加工技术要求很高.目前急需一种工艺简单、重复性好、三维尺度可控的硅纳米线制备方法.本文重点研究了基于浓硼扩散层的可集成硅纳米线谐振子的制备方法.该方法采用电子束光刻定义可控尺度硅纳米线,并利用TMAH腐蚀自停止效应实现谐振子的释放.文中还采用SEM对所制备的纳米线谐振子进行了表征.实验结果表明,基于浓硼扩散层制备的硅纳米线谐振子形貌规则,结构可控可调.该方法能够实现可控制的大面积、高产率、低成本、可集成的硅纳米线谐振子制备.

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