本文利用改进的垂直无籽晶气相升华法生长出尺寸达Φ30×40 mm的优质硒化镉(CdSe)单晶体.解理晶体,通过X射线衍射仪测试精确的获得(001)晶面.然后定向切割、研磨、抛光,获得了尺寸为20×20×3 mm3的CdSe中红外波片初胚.以弱碱性溶液与刚玉粉的混合液作为抛光液,利用化学机械抛光法对CdSe中红外波片进行表面抛光处理.结果显示,抛光处理有效的减少了波片表面的损伤层、划痕及结构缺陷,晶片表面的粗糙度降低,在2～20μm波段透过率较高(达到70 ％),满足中红外波片的应用需求.
In this paper,a piece of CdSe single crystal with a size of Φ30 × 40 mm3 has been grown by the modified vertical unseeded vapor sublimation method.The accurate (001) face was obtained by X-ray diffraction test after crystal was cleavaged.A CdSe infrared waveplate with size of 20 × 20 × 3 mm3 was got by cuting,grinding and polishing.Then the surface of CdSe infrared waveplate was polished by chemical mechanical polishing method in liquid maxed alkaline solution and polishing liquid.The results show that polishing treatment can effectively reduce the scratch,defects and surface roughness of structure layer,and the infrared transmittance of the plate in the range of 2-20 μm is high(up to 70％),which can satisfy the processing requirements of infrared waveplate.
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