对玻璃/铝/玻璃3层结构进行阳极键合试验,分析键合温度和电压对键合电流的影响；通过扫描电镜对键合界面的微观结构进行分析,表明键合界面良好；对玻璃/铝/玻璃3层结构阳极键合机理进行探讨,认为键合界面处接通电流瞬间产生的强大的静电场力是实现玻璃/铝/玻璃界面紧密接触并形成良好界面键合的主要原因.
参考文献
| [1] | Schjolberg-Henriksen K;Jensen GU;Hanneborg A;Jakobsen H .Anodic bonding for monolithically integrated MEMS[J].Sensors and Actuators, A. Physical,2004(2/3):332-339. |
| [2] | Wen-Pin Shih;Chung-Yuen Hui;Norman C. Tien .Collapse of microchannels during anodic bonding: Theory and experiments[J].Journal of Applied Physics,2004(5):2800-2808. |
| [3] | 陈明样;易新建;甘志银.基于正交试验的阳极键合强度研究[J].功能材料器件,2005(11):381-387. |
| [4] | Scghikberg-Gebrujsen K;Poppe E;Moe S et al.Anodic bonding of glass to aluminum[J].Microsystem Technologies,2005,12(05):441-449. |
| [5] | Shuichi Shoji;Hiroto Kikuchi;Hirotaka Torigoe .Low-temperature anodic bonding using lithium aluminosilicate-β-quartz glass ceramic[J].Sensors and Actuators, A. Physical,1998(1/3):95-100. |
| [6] | Morsy M.A.;Ikeuchi K. .Mechanism of Enlargement of Intimately Contacted Area in Anodic Bonding of Kovar Alloy to Borosilicate Glass[J].Materials transactions,1996(9):1511-1517. |
| [7] | Steen Weichel;Roger de Reus;Michael Lindahl .Silicon-to-silicon wafer bonding using evaporated glass[J].Sensors and Actuators, A. Physical,1998(1/3):179-184. |
| [8] | 秦会峰,杨立强,孟庆森.硼硅玻璃与硅阳极键合机理及其界面微观结构分析[J].兵器材料科学与工程,2009(01):13-16. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%