Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

材料科学技术（英文）, 2009, 25(5): 699-702.

^1, , ^2, , ^3, , ^4, , ^5,

1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China;Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

2.Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China

4.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China;Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

5.Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

基金项目: the Program for Changjiang Scholars and Innovative Research Team in Northeastern University(IRT0713) 国家重点基础研究发展规划(973计划)(2004CB619303) 国家自然科学基金(50571103;50971125)

Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

M. Wang ^1, , B. Zhang ^2, , G.P. Zhang ^3, , Q.Y. Yu ^4, , C.S. Liu ^5,

2.Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

3.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China

5.Key Laboratory for Anisotropy and Texture of Materials of Ministry of Education, School of Materials & Metallurgy,Northeastern University, 3-11 Wenhua Road, Shenyang 110004, China

Keywords： Electrical resistivity

The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm. Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales. The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair (F-S) and Mayadas-Shatzkes (M-S) combined model.

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Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

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