材料期刊网

目的：通过 SRIM 程序模拟,对石英玻璃金属化工艺进行优化。方法对不同情况界面进行对比分析,配合 SRIM 程序模拟,得出理想的金属化界面,提出通过增加阻挡层的方法来得到这种界面。分析 SRIM 程序模拟结果,选取阻挡层分别为5,10,15,20 nm 四种厚度,模拟能量20 keV 的 Ti 离子注入不同厚度阻挡层样品中的射程分布,获取合适的阻挡层厚度,并利用高低温冲击方法进行验证。结果合适的阻挡层厚度范围为10~15 nm,在此范围内,注入的 Ti 离子最大浓度位置集中在金属化层与石英玻璃之间的界面附近。结论利用 SRIM 程序模拟可以得出最佳的阻挡层厚度范围,提高金属化层的性能。

Objective To optimize the process of quartz metallization through SRIM simulation. Methods Though comparative analysis of different interfaces combined with SRIM simulation, the ideal metallization interface was obtained. The approach of adding the blocking layer was put forward to get the interface. The SRIM simulation results were analyzed, and four kinds of thick-ness (5, 10, 15, 20 nm) were selected. The range distribution of Ti ion with the energy of 20 keV implanted into specimens of blocking layer with different thicknesses was simulated to select the appropriate thickness and the metallization layer was tested with the method of high and low temperature shock. Results The range for the appropriate thickness of the blocking layer was 10 ~ 15 nm. Within this range, the site for the maximum concentration of implanted Ti was near the interface between the metallization lay-er and the quartz glass. Conclusion For the different ion implantation energy, the simulation could obtain the optimum thickness of blocking layer using SRIM program, and then improve the performance of the metallization layer.