利用掠入射X射线衍射(GIAXRD)研究了GCr15轴承钢表面等离子体浸没离子注入与沉积(PⅢ＆D)氮化钛(TiN)薄膜后膜层表面的应力状态.用X射线衍射(XRD)分析了处理后膜层的化学组成.探讨了薄膜厚度和掠入射角对表面膜层中应力变化规律的影响.结果表明,表面膜层中主要存在TiN相,同时含有少量的TiO2和钛氮氧的化合物.不同工艺下,TiN/GCr15轴承钢试样表面膜层中存在的应力均为压应力;且应力值随着掠入射角度的增大而减小,随着薄膜厚度的增加而降低.
参考文献
| [1] | 刘元富,张谷令,王久丽,刘赤子,杨思泽.脉冲高能量密度等离子体法制备TiN薄膜及其摩擦磨损性能研究[J].物理学报,2004(02):503-507. |
| [2] | 王钧石.PIII方法制备的TiN膜的性能[J].机械工程材料,2004(11):19-21. |
| [3] | Ueda T M;Berni L A;Castro R M .Application of plasma immersion ion implantation for improved performance of tools and industrial compouents[J].Surface and Coatings Technology,2005,200(03):517-520. |
| [4] | Prevey P S.Current applications of X-ray diffraction residual stress measurement[M].ASM international,1996:103-110. |
| [5] | Hilley M E .Residual stress measurement by X-ray diffraction[J].SAE(Society of Automotive Engineers)Transactions,1971,784(02):21-24. |
| [6] | Analysis and computation of the internal stress in thin films[J].自然科学进展(英文版),1998(06):679. |
| [7] | Noyan I C;Cohen J B.Residual stress measurement by diffraction and interpretation[M].New York:Springer-Verlag,1987 |
| [8] | Dole H;Hauk V .Einfluss der mechanischen aniso tropie des vielkristalls (Texture) auf die rontgenographisehe spennungsermittlung[J].Zeitschrift fur Metallkunde,1978,69:410-417. |
| [9] | Wang S Y;Chu P K;Tang B Y et al.Improvement of the corrosion property of Cr4Mo4V Mating steel using plasma immersion ion implantation[J].Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,1997,127-128:1000-1003. |
| [10] | Li WL;Sun Y;Fei WD .Residual stress and Curie temperature of Fe-N thin films prepared by dc magnetron sputtering at elevated temperature[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(14):4995-5001. |
| [11] | Li WL.;Sun Y.;Fei WD. .Effect of implantation voltage on phase composition and surface roughness of alpha-Fe surface layer implanted by nitrogen ion[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(3/4):192-198. |
| [12] | Davis C A .A model of the compressive stress in thin films by ion bombardment[J].Thin Solid Films,1993,226:30-34. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%