在不同硫分压r (r=Sn/[N2+Sn])下,采用Cu-In预制膜硫化法制备了CuInS2薄膜.用扫描电子显微镜、X射线衍射仪、霍尔测试仪、紫外-可见光分光光度计对薄膜的表面形貌、结构、电学、光学性能进行了表征分析.结果表明:随着r增加,薄膜的结晶质量提高,当r＝1/2时,晶粒大小如一,粒度保持在1 μm左右,沿[112]晶向择优生长,载流子浓度为5.6×1016 cm-3,光学带隙在1.53 eV左右.
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