严重的开路电压损耗是限制铜锌锡硫(硒)薄膜太阳电池性能提升的关键问题,其吸收层和缓冲层界面的能带结构有待进一步优化.针对此问题,本文对CZTSe/Cd1-xZnxS界面的能带结构进行了研究.首先,模拟计算了化学水浴法制备Cd1-xZnxS薄膜所需的溶液体系条件,通过椭偏仪和SEM测试结果分析了不同Cd/Zn比例的Cd1-xZnxS缓冲层形貌、光学特性以及禁带宽度.然后,对CZTSe/Cd1-xZnxS界面进行了XPS测试分析,发现CZTSe/Cd0.9Zn01S界面最为匹配,其导带失调值约为0.3 eV.最后对电池器件进行了制备与测试,得到的CZTSe/Cd0.9Zn0.1S结构的太阳电池比CZTSe/CdS结构具有更高的开路电压,达到了394 mV,转换效率达到了5.78％.
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