介绍了Pb(Zr,Ti)O3,(PZT)铁电薄膜电容的研究现状,列举了不同电极和缓冲层所制备出的PZT铁电薄膜电容的结构,并对不同结构进行了分析比较,结果表明由于氧化物电极材料的各种优越性,已被证明可用于替代现有的金属电极材料,从而有效解决了PZT薄膜铁电性能退化的问题,是未来铁电薄膜电容的发展方向.
参考文献
[1] | Lines M E;Glass A M.Principles and Applications of Ferroelectrics and Related Materials[M].Oxford,UK:Oxford University Press,2001:607. |
[2] | Hidemi Takasu .Ferroelectric memories and their applications[J].Microelectronic engineering,2001(1/4):237-246. |
[3] | Cohen RE. .Theory of ferroelectrics: a vision for the next decade and beyond[J].The journal of physics and chemistry of solids,2000(2):139-146. |
[4] | Kohlstedt H;Mustafa Y;Gerber A et al.Current status and challenges of ferroelectric memory devices[J].Microelectronic Engineering,2005,80:296. |
[5] | 邵天奇,任天令,李春晓,朱钧.高介电常数材料在半导体存储器件中的应用[J].固体电子学研究与进展,2002(03):312-317. |
[6] | Ramesh R.;Auciello O.;Aggarwal S. .Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,2001(6):191-236. |
[7] | 刘梅冬.压电铁电材料与器件[M].武汉:华中理工大学出版社,1992:88. |
[8] | Aoki Katsuhiro;Fukuda Yukio;Numata Ken et al.Ferroelectric properties of crystalline-oriented lead-zirconate-titanates formed by sol-gel deposition technique[J].Japanese Journal of Applied Physics,1995,34:746. |
[9] | Yao K.;Zhu WG. .Improved preparation procedure and properties for a multilayer piezoelectric thick-film actuator[J].Sensors and Actuators, A. Physical,1998(1/2):139-143. |
[10] | Scott J F;Araujo C A;Meinick V M et al.Quantitative measurement of space-charge effects in lead zirconate-titanate memories[J].Japanese Journal of applied physics,1991,70(01):382. |
[11] | 钟维烈.铁电体物理学[M].北京:科学出版社,1996:310. |
[12] | Blanco O;Martinez E;Heiras J et al.Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films[J].Microelectronics Journal,2005,36(3-6):543. |
[13] | Fu X Xiaorong;Li Jinhua;Song Zhitang et al.Growth of highly (100)-oriented Zr-rich PZT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process[J].Journal of Crystal Growth,2000,220(1-2):82. |
[14] | Liu Jingsong;Zhang Shuren;Yang Chengtao et al.Low-temperature fabrication of Pb(Zr0.52Ti0.48)O3 films using a new chemical solution deposition method without post-annealing[J].Journal of Crystal Growth,2004,264(1-3):302. |
[15] | Ichiki M;Ricinschi D;Wang Z et al.Structural observation of PZT system film in the use of pulsed-laser deposition method[J].Journal of the European Ceramic Society,2001,21(10-11):1557. |
[16] | Shimizu Masaru;Fujisawa Hironori;Niu Hirohiko et al.Growth of ferroelectr PbZrxTi1-xO3 thin films by metalorganic chemical vapor deposition (MOCVD)[J].Journal of Crystal Growth,2002,237-239(01):448. |
[17] | Usher B F.Contribution of kinetic nucleation theories to studies of volmer-weber thin film growth[A].,1984:506. |
[18] | 吴自勤;王兵.薄膜生长[M].北京:科学出版社,2001:181. |
[19] | Li Lin .Ferroelectric/superconductor heterostructures[J].Materials Science and Engineering,2000,29:153. |
[20] | Torrance J B;Lacorre P;Nazzal A I et al.Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr,Nd,Sm,Eu)due to closing of charge-transfer gap[J].Physical Review,1992,45(14):8209. |
[21] | Naoya Inoue;Naoya Furutake;Akio Toda;Munehiro Tada;Yoshihiro Hayashi .PZT MIM Capacitor With Oxygen-Doped Ru-Electrodes for Embedded FeRAM Devices[J].IEEE Transactions on Electron Devices,2005(10):2227-2235. |
[22] | Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors[J].Applied physics letters,2003(10):1604-1606. |
[23] | Vilquin B.;Le Rhun G.;Bouregba R.;Poullain G.;Murray H. .Effect of in situ Pt bottom electrode deposition and of Pt top electrode preparation on PZT thin films properties[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):63-73. |
[24] | Foster C M;Csencsits R;Baldo P M.Epitaxial Pb(ZrxTi1-x)O3/SrRuO3 (x=0,0.35,0.65)multilayer thin films on SrTiO3(100)and MgO(100)prepared by MOCVD and RF sputtering[A].Bellingham,WA,USA,1995:279. |
[25] | Guereero C;Roldan J;ferrater C et al.Growth and characterization of epitaxial ferroelectric PbZrxTi1-xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications[J].Solid-State Electronics,2001,45:1433. |
[26] | Zhu T J et al.Growth and properties of (001)-oriented Pb(Zr0.52Ti0.48)O3/LaNiO3 films on Si(001)substrates with TiN buffer layers[J].Journal of Crystal Growth,2005,273(1-2):172. |
[27] | Guerrero C.;Ferrater C.;Roldan J.;Garcia-Cuenca MV.;Varela M.;Sanchez F. .Pulsed laser deposition of epitaxial PbZrxTi1-xO3 ferroelectric capacitors with LaNiO3 and SrRuO3 electrodes[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/4):219-222. |
[28] | Masuda Yoichiro;Takashi Nozaka .Investigation into electrical conduction mechanisms of Pb(Zr,Ti)O3 thin-film capacitors with Pt,IrO2 and SrRuO3 top electrodes[J].Japanese Journal of Applied Physics,2004,43(9B):6576. |
[29] | Masuda Y;Nozaka T .The influence of various upper electrodes on fatigue properties of perovskite Pb(Zr,Ti)O-3 thin films[J].Japanese journal of applied physics,2003(9b):5941-5946. |
[30] | Scott R Summerfelt;Howard R Beratan .Electrode interface for high-dielectric-constant materials[P].US 5471364,1995-11-28. |
[31] | 任天令,张林涛,张武全,李春晓,刘理天,李志坚.一种新型硅基PT/PZT/PT夹心结构的电性能研究[J].压电与声光,2000(06):407-409. |
[32] | Kim Seung-Hyun;Choi Yong-Soo;Kim Chang-Eun et al.The effects of PbTiO3 thin template layer and Pt/RuO2 hybrid electrode on the ferroelectric properties of sol-gel derived PZT thin film[J].Thin Solid Films,1998,325:72. |
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