采用 Ｆ Ｔ Ｉ Ｒ、 Ｔ Ｅ Ｍ、 Ｓ Ｅ Ｍ 等技术， 对在渗硼层表面经ｒ.ｆ. Ｐ Ｃ Ｖ Ｄ 沉积的 Ｂ Ｎ 膜进行了研究试验证明， 与采用 Ｎ２ 气和 Ｈ２ 气相比， 以 Ａｒ ＋ １０ｖｏｌ％ Ｈ２ 作为载气， 所获得的膜层ｃ-Ｂ Ｎ 含量最高， 膜厚最大， 可达４.６μｍ ， 且膜基结合良好而以 Ｎ２ 气或 Ｈ２ 气为载气时， 前者会导致膜基结合力大大下降， 后者会引起沉积速度明显降低结果表明， 对于 Ｐ Ｃ Ｖ Ｄ 过程， 控制ｃ- Ｂ Ｎ 形成的主要因素是离子轰击能量的转移， 而不是氢的选择溅射过程试验获得的膜层由ａ- Ｂ Ｎ 和ｃ- Ｂ Ｎ 组成， ｃ- Ｂ Ｎ的尺寸为２０ ～４０ｎｍ
Boron nitride (BN) films were deposited on a pre-boronised AISI 5140 substrate by r. f. plasma-assisted CVD technique, with nitrogen (N2),
hydrogen (H2) or H2 diluted at 10 vol% in argon (Ar) being carrier gas. It was found by FTIR and SEM analyses that for the three kinds of carrier gas
the c-BN content was the highest if Ar+10% H2 was used, the film thickness was the thinnest if H2 was used, and the bonding strength of the film
determined through indentation test, was the poorest if N2 was used as the carrier gas. TEM analysis indicated that most of the films were the
mixtures of amorphous and cubic BN phases, with the sizes of the c-BN particles being 20--40 nm.
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