在双靶射频溅射系统中,以氢气为工作气体,交替溅射高纯Ge和SiO2,制备出了非晶态Ge/SiO2超晶格.小角度X射线衍射分析结果表明样品具有良好的周期性和界面平整性.其光学带降Eopt由红外透射、反射谱确定.当锗势阱层厚度从0.38nm减小到0.12nm时,超晶格光学带欧发生约0.3eV的游移.
The amorphous Ge/SiO2 superlattices have been prepared by rf sputtering with poIycrystalline Ge and quata targets in Ar ambient. Small angle X-ray diffraction measurement was carried to invedigate the structure of the samples, the results indicate the abr
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