45nm PCRAM对GST CMP的挑战和解决方法

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1.Semiconductor Manufacturing International (Shanghai) Corp

2.Semiconductor Manufacturing International (Shanghai) Corp

3.Semiconductor Manufacturing International (Shanghai) Corp

4.Semiconductor Manufacturing International (Shanghai) Corp

5.Semiconductor Manufacturing International (Shanghai) Corp

6.Semiconductor Manufacturing International (Shanghai) Corp

7.Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

8.Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

本文报导GST(Ge2Sb2Te5)CMP工艺的挑战和解决方法.通过适当的抛光垫选择、工艺方案和清洗步骤优化解决GST的污染问题.实现最小氧化物损失的关键因素是抛光液的稀释比例和H2O2浓度的优化和控制过抛光.微微秒激光acoustics型测量工具证明适用于GST CMP工艺的在线和离线监控.

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