用改进溶胶-凝胶法在Pt/Ti/SiO_2/Si上制备了钇(Y)掺杂Ba_0.6Sr_0.4TiO_3 (BST)薄膜,研究了Y掺杂对BST薄膜表面结构和介电性能的影响.XPS结果表明,Y掺杂有利于薄膜钙钛矿结构的形成,但对氧空位没有明显的抑制作用.SEM和AFM结果表明,Y掺杂能缓解薄膜应力、减少薄膜裂纹、细化晶粒,进而改善薄膜的表面结构.在进行Y掺杂后,薄膜的介电性能得到明显提高,40 V外加电压下的介电调谐率大于40%及零偏压下介电损耗为0.0210,优化因子大于20.
Yttrium (Y)-doped Ba_0.6Sr_0.4TiO_3 (BST) films were prepared on Pt/Ti/SiO_2/Si by improved Sol-gel method. The surface structure and dielectric properties of the BST films were investigated. X-ray photoelectron spectrum shows that the surface structures of Y-doped BST films are composed of perovskite structure and non-perovskite structure, and Y doping is helpful to increase the amount of perovskite structure, but is not so obvious to reduce oxygen vacancies. Scanning electron microscope and atomic force microscope exhibit that Y doping is beneficial to reduce stress and cracks, make crystal size smaller, and thus improve film surface structure. Also, Y doping markedly improves film dielectric properties with more than 40% tunability at 40 V, about 0.0210 dielectric loss (tand) at zero bias and hence merit value more than 20 figure.
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